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MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form [1]

a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below).

GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk.

Our single crystal GeAs (Germanium arsenide) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using

Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21

石墨烯-HIPS（高抗沖聚苯乙烯）長絲是由Graphene 3D Lab制造的產品，是一種高科技工程FDM材料，增強了石墨烯填料，可實現高精度3D打印。該長絲是半柔性的，具有高抗沖擊性。它還具有改進的層間粘合性，為3D打印物體提供了出色的機械性能。 用作托盤基質的HIPS（高抗沖聚苯乙烯）聚合物是彈性，堅韌的聚合物。石墨烯納米片用作填料，通過增加其拉伸強度，抗沖擊性和耐磨性來增強長絲的機械性能。